Interaction of nonuniform elastic waves with two-dimensional electrons in AlGaAs-GaAs-AlGaAs heterostructures

摘要

An interaction of a double layer electron system realized in anAlGaAs-GaAs-AlGaAs heterostructure with nonuniform elastic modes localized inthe GaAs layer is considered. The dependence of the coupling constant on theratio between the thickness of the GaAs layer and the wavelength is calculatedfor the wave vector directed along the [110] axis, the displacement vectorlying in the (1-10) plane and the interface boundaries parallel to the (001)plane. It is shown, that the coupling constant reaches the maximal value at thewavelength which is of order of the thickness of the GaAs layer. Therenormalization of the velocity of the elastic modes is found for the case,when the electron system is in the fractional quantum Hall regime. It is shown,that for certain modes the dependence of the velocity shift on the wave vectoris modified qualitatively under a transition of the electron system to thestate, which corresponds to the Halperin wave function.